14–16 Feb 2017
ESA/ESTEC
Europe/Amsterdam timezone

D3P8 - TRP - GaN Power stage based on European technology for Navigation SSPA in L-band - THALES ALENIA SPACE (France)

16 Feb 2017, 14:35
30m
Newton 1 & 2 (ESA/ESTEC)

Newton 1 & 2

ESA/ESTEC

Keplerlaan 1, 2201 AZ Noordwijk Netherlands

Speaker

Mr Fabrice DELAHAYE (Thales Alenia Space)

Description

The aim of this ESA-TRP study is to develop a SSPA output power section for navigation in L-band in the range of 120-150 W capable of power flexibility. This power stage will be based on GaN technology coming from European industrial Foundry. By the way, the main proposed activity is to design, manufacture and test a hybrid HPA module at L-band based on the United Monolithic Semiconductors 0.5μm (GH50) technology

Short Speaker Information

NAME Delahaye Fabrice

Graduate engineer Diploma from the “ENSEEIHT ” of Toulouse, France in Electrical Engineering, he has been involved from 1997 to 2009 for TAS-F on the design and development of SSPA for space applications. And since 2010 he has been on the design of analog RF Integrated circuit and hybrid circuit solutions based on GaAs and Gan technologies.

PRESENT POSITION: MMIC designer member of the Microwave Building Block Design Group

CONTRACT FRAME (ARTES, ITI, TRP, GSTP, NPI, ...) TRP
BUDGET (k€) 500
ENTITIES (Including country) THALES ALENIA SPACE France
Proposed Duration 30'

Primary author

Mr Fabrice DELAHAYE (Thales Alenia Space)

Co-author

Mr Benoit LEFEBVRE (Thales Alenia Space France)

Presentation materials

There are no materials yet.