Speaker
Prof.
Ernesto Limiti
(MECSA - Italy)
Description
Target of the activity is the design of a single-chip integrating integrating low noise amplification (LNA), high power amplification (HPA) and switching (SPDT) functionalities in Gallium Nitride technology.
The distinctive feature of the project has been the development of the requested single chip making use of two different European GaN technologies, and namely the UMS GH25 and Selex ES 0.5um technologies. The achieved performance will be presented.
TEAM
MECSA (prime)
Thales Alenia Space Italy
Selex Electronic Systems
United Monolithic Semiconductors
Primary author
Prof.
Ernesto Limiti
(Microwave Engineering Center for Space Applications (MECSA) – ITALY)
