Speaker
Mr
Axel Hülsmann
(Fraunhofer-IAF (DE))
Description
This project aimed to investigate the feasibility of 35 nm T-gate mHEMT and 100 nm T-gate ABCS technologies for LNAs working at 300 GHz and above using European semiconductor technologies. Furthermore, the project demonstrated good performance of LNAs in a waveguide package by designing, fabricating and testing of low-noise amplifier MMICs for 300 GHz.
Primary authors
Mr
Mikko Kantanen
(MilliLab (FI))
Mr
Petri Jukkala
(Da-Design (FI))
Mr
Sebasitan Diebold
(KIT-IHE (DE))
