Speaker
Mr
Pierre Pourrouquet
(TRAD)
Description
The evolution in the microelectronic field leads to the presence of high Z materials close to the sensitive volume of electronic components. Through interactions with highly energetic protons, as is the case in irradiation facilities or in space, recoil atoms can reach these sensitive volumes with high LET. Based on worst case hypotheses, this study showed the presence of high LET recoil particles in the component sensitive area, displayed their LET distribution and located their volume of origin.
