27–29 May 2014
Jackson Center, Huntsville, Alabama, USA
US/Central timezone

3D TCAD and Mixed-Mode Simulation of Devices and ICs with Complex Nuclear Events from MRED/Geant4

27 May 2014, 16:00
25m
Jackson Center, Huntsville, Alabama, USA

Jackson Center, Huntsville, Alabama, USA

Speaker

Dr Alex Fedoseyev (CFDRC)

Description

Resolution of fine features is paramount for correctly describing the physics of device response to nuclear event. TCAD and circuit-device (mixed-mode) tools coupled with MRED/Geant4 for automated simulations of nanoscale complex nuclear event effects from ion tracks in integrated circuits devices are presented. 3D CFDRC NanoTCAD simulator includes automatic building of 3D models from integrated circuit layouts (GDSII), and generating and adaptation of computational mesh to fine nanoscale features of multi-branched high energy ion tracks produced by Vanderbilt University MRED/Geant4 package. Generation and parallel simulation of hundreds (or thousands) of events is automated with minimal user intervention. This approach allows significant increase in computation efficiency.

Primary author

Dr Alex Fedoseyev (CFDRC)

Co-authors

Presentation materials

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