12th Geant4 Space Users Workshop

Modeling of Irradition Effects in sub-N7 CMOS Logic Devices Using Layout-Based Design

11 Apr 2017, 16:55

25m

Software tools

Speaker

Mr Oskar Baumgartner (Global TCAD Solutions GmbH)

Description

Modern electronic systems can be disrupted or damaged by high energy particles. Radiation effects have become a critical reliability issue in nanometer-scaled logic devices, particularly for aviation applications or space environments, and now increasingly for safety critical ground-level applications such as transportation and medicine. In the industrial development process of such devices the radiation tolerance is studied at particle accelerator facilities or gamma-ray sources. However, this method is time consuming and very expensive, and the availability of such facilities is limited. If the degradation of device performance due to irradiation can be simulated by software, the test time and cost of investment for device development will be greatly reduced. Furthermore, with the advancement of semiconductor technology, the characteristic dimension of devices such as modern SRAMs and logic cells have already reached the nanometer-scale. The potential radiation effects and tolerances are inherently different for devices at the nanometer-scale and devices at the micrometer-scale. We present a consistent TCAD modeling toolchain for upcoming semiconductor technology nodes that incorporates a high-energy particle simulator and a sophisticated device and mixed-mode circuit simulator. Layout-based design and technology rule files provide a quick setup of the sub-N7 devices under test. Our toolchain enables the calculation of radiation effects on SRAM and logic cells containing state-of-the-art FinFET and nanowire transistors.

Presentation materials

Slides

FinFET_SRAM_SEU.avi

GTS_G4SUW2017.pdf