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Vincent POUGET (IES - CNRS)11/09/2024, 09:40
The laser method for Single-Event Effects testing is based on the photoelectric interaction of a short and focused laser pulse with the semiconductor material of a device to mimic the transient and localized track of electron-hole pairs that is produced by primary or secondary ionizing particles from radiation environments. We will briefly introduce the fundamentals of the laser testing...
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Thomas BOREL (TEC-QEC)11/09/2024, 10:10
Over the past three years, the ESA TEC laboratory has been equipped with a SEE laser facility. During this period, we conducted a variety of tests and assessments on EEE components to evaluate their SEE sensitivity and identify design vulnerabilities. Additionally, we developed several tools to enhance data acquisition and analysis. In this presentation, we will showcase the results of...
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Mr Matthieu FONGRAL (IES)11/09/2024, 10:30
We present Single Event Effect (SEE) testing method and results in a complex System-on-Chip (SoC) fabricated with a 16nm FinFET technology using backside Single Photon Absorption (SPA) laser testing, including Single Event Latchup (SEL), Single Event Transient (SET) and Single Event Upset (SEU) results.
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salma ACHAQ (ONERA/IES)11/09/2024, 10:50
We present our single-event effects (SEE) laser testing method and results on a commercial programmable 7nm FinFET System-on-Chip (SoC) obtained using backside single-photon absorption (SPA).
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Dr Ani KHACHATRIAN (US Naval Research Laboratory)11/09/2024, 11:40
With their high breakdown voltage and ability to withstand high temperatures, wide bandgap-based devices are ideally suited for high-power and high-frequency applications in satellite communications, RADAR, and defense power switching. However, these devices, based on wide bandgap (WBG) semiconductor materials, are known to be prone to single-event effects (SEE). The susceptibility to single...
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Paul GRANDAMME (Laboratoire Hubert Curien, Université Jean Monnet, CNRS)11/09/2024, 12:00
Lasers are employed not only for reliability purposes but also for fault injection attacks in order to assess the security of electronic components.
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Nowadays, laser fault injection attacks represent a significant threat to the security of embedded devices.
Numerous state-of-the-art studies, mainly based on Single Event Effects, have investigated the use of lasers to inject faults into an... -
Samuel DUBOS (TRAD Tests & Radiations)11/09/2024, 12:20
The use of pulsed laser for pre-screening COTS parts to SEEs, and more specifically to Single Event Latchup, is beneficial because of the reduced cost and greater availability this method provides, as compared to heavy ions. At TRAD, pulsed Laser is mainly used for this purpose: evaluating part sensitivities to SEEs, prior to heavy ion testing, in order to reject the most sensitive ones, thus...
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Sebastien JONATHAS (PULSCAN)11/09/2024, 12:40
In the field of single-event effects (SEE) testing, laser testing [1] is commonly used for different purposes. The most well-known application is probably the accurate mapping of SEE sensitive areas in a device, especially in the context of radiation-hardening of an integrated circuit (IC) design. Another application consists in screening different components against critical events like...
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Steve BUCHNER (NRL)11/09/2024, 14:20
SEE testing using a focused, pulsed laser has reached a level of maturity that the technique is now widely employed in many laboratories around the world to supplement and complement heavy-ion testing. This has led to the publication of a handbook on focused, pulsed SEE laser testing to help those with little experience in optics perform SEE testing successfully and to present a series of...
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Adrian ILDEFONSO (U.S. Naval Research Laboratory)11/09/2024, 15:00
After the invention of the laser in 1960, it wasn’t long until its potential use to emulate transient radiation-induced effects was recognized. Following the first experimental demonstration of this capability in 1965, a series of studies that aimed to replicate various single-event effects (SEEs) were published in quick succession. However, it wasn’t until 1987 when the first attempt to...
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Joel HALES (U.S. Naval Research Laboratory)11/09/2024, 15:20
Surrogate testing approaches that can predict heavy-ion single-event effect (SEE) responses in a device-under-test (DUT) could prove invaluable in easing pressure on oversubscribed heavy-ion facilities. However, predictive testing faces many challenges for successful implementation. The most significant of these challenges is generating a carrier distribution capable of reproducing the desired...
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Richard SHARP (Radtest Ltd)11/09/2024, 15:40
As part of the commissioning activity for the new SEREEL2 pulsed laser single-event effects test system being created at Radtest Ltd’s Harwell site, tests have been carried out on two types of component to compare heavy ion test data with the results of laser testing. These results are being used for a comparison exercise to demonstrate the applicability of laser testing for the assessment of...
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Mario SACRISTAN BARBERO (Univ. Montpellier - CERN)11/09/2024, 16:30
We present pulsed-laser SEE tests on commercial SRAMs
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sensitive to SEL and SEU, comparing results to heavy ion data. -
Yingqi MA11/09/2024, 16:50
The presentation gives a comparative analysis for the results of laser and heavy ion experiments carried out by the National Space Science Center of the Chinese Academy of Sciences for integrated circuits and wide band gap semiconductor devices. By theoretical modeling and determination of the key parameters, the laser heavy ion equivalent relationship models for bulk silicon process and wide...
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Marco PINTO (ESA)11/09/2024, 17:10
Thorough calibration of silicon detectors and their front-end electronics is a time-consuming and high-cost activity. Not only several particle beams including electron, proton, and heavy ions are needed, but also, depending on the design, other property effects such as temperature, bias voltage, and gain to name a few, might need to be characterized. This is especially true for the JUpiter...
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12/09/2024, 10:00
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Chris CHONG (Radtest Ltd)
We investigated the nonlinear absorption behaviours in wide bandgap semiconductors such as silicon carbide, SiC and gallium nitride, GaN and explored their photophysics behind the electronic transitions. The former material is an indirect semiconductor while the latter is a direct semiconductor. Though their applications are more confined in comparison with the traditional silicon...
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Ricardo ASCAZUBI (Intel Corp.)
Infrared lasers have been used in the semiconductor industry for several decades in various applications such as physical debug. Laser injection has been demonstrated as an important tool to study the vulnerability of VLSI circuits to SEE. In particular laser can segment the different vulnerabilities occurring in different layouts throughout the VLSI chip. Despite this, a universal approach...
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Maxim GORBUNOV (imec)
Ultra deep-submicron (UDSM) technologies are widely recognized for satellite constellations and other aerospace applications. Besides the advanced performance characteristics, 7-nm FinFET technology represents a local minimum in alpha-particle Soft-Error Rate (SER) compared to the previous nodes and the 5-nm node [1], which makes the technology very attractive for aerospace applications. The...
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