Speaker
Yingqi MA
Description
The presentation gives a comparative analysis for the results of laser and heavy ion experiments carried out by the National Space Science Center of the Chinese Academy of Sciences for integrated circuits and wide band gap semiconductor devices. By theoretical modeling and determination of the key parameters, the laser heavy ion equivalent relationship models for bulk silicon process and wide bandgap semiconductor process devices were obtained, and the above relationship and uncertainty were verified through a series of experiments with single photon and two-photon absorption mechanism.
