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Chris CHONG (Radtest Ltd)Poster SessionPoster
We investigated the nonlinear absorption behaviours in wide bandgap semiconductors such as silicon carbide, SiC and gallium nitride, GaN and explored their photophysics behind the electronic transitions. The former material is an indirect semiconductor while the latter is a direct semiconductor. Though their applications are more confined in comparison with the traditional silicon...
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Ricardo ASCAZUBI (Intel Corp.)Poster SessionPoster
Infrared lasers have been used in the semiconductor industry for several decades in various applications such as physical debug. Laser injection has been demonstrated as an important tool to study the vulnerability of VLSI circuits to SEE. In particular laser can segment the different vulnerabilities occurring in different layouts throughout the VLSI chip. Despite this, a universal approach...
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Maxim GORBUNOV (imec)Poster SessionPoster
Ultra deep-submicron (UDSM) technologies are widely recognized for satellite constellations and other aerospace applications. Besides the advanced performance characteristics, 7-nm FinFET technology represents a local minimum in alpha-particle Soft-Error Rate (SER) compared to the previous nodes and the 5-nm node [1], which makes the technology very attractive for aerospace applications. The...
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