Speaker
Mr
Maurício Tizziani Pazianotto
(Instituto Tecnológico de Aeronáutica - ITA, Sao José dos Campos, Brazil)
Description
High-energy neutrons are produced by primary cosmic ray interactions with atoms in the atmosphere through spallation reactions and intranuclear cascade processes. These neutrons can produce secondary neutrons and also undergo moderation due to atmospheric interactions, resulting in a wide energy spectrum, which ranges from thermal energies (0.025 eV) to energies of several hundreds of MeV. The result is the cosmic-ray induced neutron (CRIN) spectrum. Neutron effects on microelectronics is a growing field due to concerns related about the effects of the CRIN on high integrated microelectronics onboard aircrafts. This work presents a Geant4 application for the calculation of the CRIN effects at different altitudes on highly integrated microelectronics, specifically on a AMISC5 flip-flop target, which has been implemented as a CAD model, imported to GEANT4 by means of GDML.
Primary author
Mr
Maurício Tizziani Pazianotto
(Instituto Tecnológico de Aeronáutica - ITA, Sao José dos Campos, Brazil)
Co-authors
Prof.
Brett Vern Carlson
(Instituto Tecnológico de Aeronáutica - ITA, Sao José dos Campos, Brazil)
Dr
Claudio Antonio Federico
(Instituto de Estudos Avançados - IEAv, Sao José dos Campos, Brazil)
Dr
Francisco Rogelio Palomo Pinto
(Departamento de Ingeniería Electrónica, Escuela Superior de Ingenieros, University of Sevilla, Spain)
Prof.
José Manuel Quesada Molina
(Departamento de Física Atómica, Molecular y Nuclear, University of Seville, Spain)
Dr
Miguel Antonio Cortés Giraldo
(Departamento de Física Atómica, Molecular y Nuclear, University of Seville, Spain)
Dr
Odair Lelis Gonçalez
(Instituto de Estudos Avançados - IEAv, Sao José dos Campos, Brazil)
