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9th Geant4 Space Users' Workshop

4–6 Mar 2013
Barcelona
Europe/Amsterdam timezone

Session

SEE simulation III: Tools and integrated solutions II

4
5 Mar 2013, 15:35
Barcelona

Barcelona

Barcelona Plaza Hotel Plaza de Espanya 6-8 08014 Barcelona SPAIN

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  1. 24. A Framework for Fully-Physical Simulation of SEU and Its Applications
    Dr Chen Shen (Cogenda Pte Ltd)
    05/03/2013, 15:35
    In this abstract, we report “RunSEU”, a fully-physical simulation framework for evaluating the SEU cross-section of CMOS circuits. Applications on the analysis of COTS chips are presented. Its limitations in engineering applications such as in-orbit SEU rate prediction or failure mode analysis, and the extensions required in those cases are discussed.
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  2. 50. Geant4 and MINIMOS-NT-based device physics simulation framework for deep sub-micron CMOS radiation effects analysis
    Dr Pete Truscott (Kallisto Consultancy Ltd)
    05/03/2013, 16:00
    The trends in modern CMOS microelectronics technology towards ever smaller feature sizes and more complex geometries containing many different materials has made it increasingly difficult to define appropriate models to treat radiation effects phenomena, especially single event effects. The ESA-funded DESMICREX Project is aimed at developing a system of state-of-the-art simulation software...
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  3. 17. CODES
    Ms Ana Keating (LIP/ESA)
    05/03/2013, 16:25
    CODES (COmponent DEgradation Simulation) is an ESA GEANT4 based top level engineering to predict Single Event Effects in EEE devices. It consists of different GEANT4 modules with a user friendly web-based interface. The different modules consist of device geometry definition (including packaging and shielding), device sensitivity interpretation based on experimental test data and data...
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