12-16 November 2018
ESA/ESTEC
Europe/Amsterdam timezone

Single Event Effects Induced by Heavy Ion and Single Photon Pulsed Laser Irradiation on Atom Switch based Field Programmable Gate Array

Not scheduled
1h
Newton 1-2 (ESA/ESTEC)

Newton 1-2

ESA/ESTEC

Keplerlaan 1, 2200 AG Noordwijk The Netherlands
Poster Radiation effects Radiation effects (SEE, TID, TNID)

Speaker

Mr Kozo Takeuchi (Japan Aerospace Exploration Agency)

Description

Single event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal oxide semiconductor (CMOS) were investigated with both heavy ion and pulsed laser irradiation. In the evaluation of atom switch-based field programmable Gate Array (AS-FPGA), ASs showed immunity against the irradiation and there was no change of the state of ASs both in a cross-bar switch and memory in look up tables (LUTs). It is supposed that ASs do not make any single event transients (SETs) noise when the ions hit. However, n-type metal oxide semiconductor field effect transistors (nMOSFETs) to program the ASs in the CMOS layer showed prolonged SETs against heavy ions hit. New approaches to solve the SET in CMOS are proposed in this paper, especially for AS-FPGA application.

Primary author

Mr Kozo Takeuchi (Japan Aerospace Exploration Agency)

Co-authors

Dr Sakamoto Toshitsugu (NEC Corp., System Platform Research Laboratories) Dr Tada Munehiro (NEC Corp., System Platform Research Laboratories) Mr Akinori Takeyama (National Institutes for Quantum and Radiological Science and Technology, Takasaki Advanced Radiation Research Institute) Dr Takeshi Ohshima (National Institutes for Quantum and Radiological Science and Technology, Takasaki Advanced Radiation Research Institute) Dr Satoshi Kuboyama (Japan Aerospace Exploration Agency) Mr Hiroyuki Shindou (Japan Aerospace Exploration Agency)

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