Speaker
Dr
Melanie Raine
(CEA)
Description
The Geant4-MuElec extension, developed by CEA, aims at modeling the effect of ionizing radiation in highly integrated microelectronic components. It describes the transport and generation of very low energy electrons (down to 16.7 eV) by incident electron, proton and heavy ions in silicon. This presentation will give a brief overview of the context motivating this effort and of the theory used to develop this extension. Validation results will be presented, along with an application case to the simulation of proton and heavy ion tracks. Perspectives on future developments will finally be exposed.
Primary author
Dr
Melanie Raine
(CEA)