Speaker
Dr
Wojciech Debski
(Silicon Radar GmbH)
Description
I. INTRODUCTION
X-band frequencies (8 - 12 GHz) are used for space and satellite communication both in civil and military applications. Traditionally, discrete microwave integrated circuits implemented in III−V technologies have been combined and used for these applications due to their performance advantages over Si technologies [1]-[3]. Unfortunately, such transceiver modules are typically power hungry, large, heavy and hence costly [4], [5]. SiGe HBT technology, being inherently tolerant to TID, good integration capabilities, medium cost and superior performance over Si technology has big advantage for space and satellite communication application. As mostly demanded, a phased locked loop (PLL) chip and a transceiver chip are designed and tested under radiation. The chip details are presented in the following sections.
II. PHASE LOCKED LOOP
Figure 1 shows the block diagram of the fabricated PLL. The VCO is a differential cross-coupled type using bipolar transistors. The PLL circuit utilizes two tuning loops. The phase frequency detector (PFD) and charge pumps are designed with CMOS transistors. Chip area is 1.22 mmx0.81 mm.
Figure 1: Block diagram of PLL chip
Table 1: PLL chip performance
Parameter
Measurement
Simulation
VCC
2.5 V
2.5 V
ICC
32 mA
29 mA
VCO tuning range
8 – 11.8 GHz
7.85 – 11.9 GHz
PLL locking range
8.192 – 10.56 GHz
8 – 10.7 GHz
Output power
-3 – +4 dBm
8 – 11 dBm
III. TRANSCEIVER
Figure 2 shows the transceiver block diagram. It contains voltage controlled oscillator (VCO), power splitter, power amplifier (PA), poly-phase filter (PPF), low-noise amplifier (LAN), quadrature mixer. Built-in system test (BIST) structure is included to test the circuit functionality without antenna and high frequency equipment. Chip area is 1.84 mm x 1.1 mm.
Figure 2: Block diagram of transceiver chip
Table 2: Transceiver chip performance
Parameter
Measurement
Simulation
VCC
3.3 V
3.3 V
ICC
153 mA
145 mA
VCO tuning range
10.6 – 12.5 GHz
10.1 – 12.0 GHz
Output power
8 – 10 dBm
10 – 12 dBm
IV. TEST UNDER IRRADIATION
The realized chips are tested under Total Dose Ionization (TID) and heavy ion irradiation. TID tests have been performed at Helmholtz-Zentrum Berlin, Germany up to 300 krad. The chips were radiated by Gamma ray from Co60 source. Electrical measurements have been performed after accumulated dose of 25 krad, 75 krad, 150 krad, 230 krad and 300 krad. Finally, after annealing of 24 hours at 25°C and annealing of 168 hours at 100 °C. No noticiable deviation in electrical performance (current, oscillation frequency, receiver gain) have been observed in the test results.
Heavy Ion tests including single event latch-up (SEL) and single event upset (SEU) tests are planned in February 2018.
REFERENCES
[1] C. Drevon, “From micropackages to MCMs up to 40 GHz for space applications,” in IEE Sem. Packaging and Interconnects at Microwave and mm-Wave Frequency, June 2000, pp. 8/1–8/4.
[2] A. K. Oki, D. C. Streit, R. Lai, A. Gutierrez-Aitken, Y. C. Chen, R. Grundbacher, P. C. Grossman, T. Block, P. Chin, M. Barsky, D. Sawdai, M. Wojtowicz, E. Kaneshiro, and H. C. Yen, “InP HBT and HEMT technology and applications,” in Proc. Int. Conf. Indium Phosphide and Related Materials, May 2000, pp. 7–8
[3] D. Streit, R. Lai, A. Oki, and A. Gutierrez-Aitken, “InP HEMT and HBT technology and applications,” in IEEE Int. Electron Devices for Microwave and Optoelectronic Applications Symp. Dig., Nov. 2002, pp. 14–17
[4] D. Yamauchi, R. Quon, Y.-H. Chung, M. Nishimoto, C. Romo, J. Swift,R. Grundbacher, D. Lee, and L. Liu, “A compact transceiver for wide bandwidth and high power K-, Ka-, and V-band applications,” in IEEE Microwave Symp. Dig., June 2003, pp. 2015–2018
[5] M. Kärkkäinen, M. Varonen, J. Riska, P. Kangaslahti, and V. Porra,“A set of integrated circuits for 60 GHz radio front-end,” in IEEE Microwave Symp. Dig., June 2002, pp. 1273–1276
Summary
This paper presents the experimental results of radiation hard phase-locked loop (PLL) and transceiver (TRX) chips in X-band frequency. The chips are designed and fabricated in IHP’s radiation hard SiGe BiCMOS SGB25V technology having peak cutoff frequency (fT) of 80 GHz. Total Dose Ionization (TID) up to 300 krad and Single Event Effect (SEE) tests have been performed for the chips. The circuit level performance degradation associated with these tests is found to be negligible.
Primary author
Dr
Nasir Uddin
(Silicon Radar GmbH)
Co-authors
Mr
Carlos Benito Sánchez
(Arquimea Deutschland GmbH)
Mr
José Ángel Domínguez Mateos
(Arquimea Ingeniería)
Prof.
Milos Krstic
(IHP)
Dr
Srdjan Glisic
(Silicon Radar GmbH)
Dr
Uroschanit Yodprasit
(Silicon Radar GmbH)
Dr
Wojciech Debski
(Silicon Radar GmbH)
Dr
Wolfgang Winkler
(Silicon Radar GmbH)
