22 January 2020
Europe/Amsterdam timezone

Single GaN Chip HPA/LNA for RADAR Applications

22 Jan 2020, 11:20


Prof. Ernesto Limiti (Università di Roma "Tor Vergata" and M.E.C.S.A.)


A Single GaN chip front-end (SCFE) integrating high power amplification, low noise and robust receiving amplification and high-power switching functionalities has been designed and realised in Leonardo SpA GaN/Si 0.25um technology. The SCFE is aimed at operating in C-Band (5.405 GHz center frequency), for eventual use in ESA Sentinel satellites.
The realised chip is featured by an output power over 40W, with a PAE in the range of 40%, with a 300MHz bandwidh in Tx Mode, while in Rx condition the chip exhibits a noise figure lower than 2.5 dB with an associated gain over 30dB.
The relevant performance of the chip itself, together with the in-Jig ones will be presented and commented, together with the status of the Leonardo 0.25um GaN/Si technology for Space applications.

ESA Technical Officer Mr Iain Davies

Primary author

Prof. Ernesto Limiti (Università di Roma "Tor Vergata" and M.E.C.S.A.)


Dr Claudio Lanzieri (Leonardo SpA) Dr Marziale Feudale (Thales Alenia Space Italy)

Presentation Materials