A Single GaN chip front-end (SCFE) integrating high power amplification, low noise and robust receiving amplification and high-power switching functionalities has been designed and realised in Leonardo SpA GaN/Si 0.25um technology. The SCFE is aimed at operating in C-Band (5.405 GHz center frequency), for eventual use in ESA Sentinel satellites.
The realised chip is featured by an output power over 40W, with a PAE in the range of 40%, with a 300MHz bandwidh in Tx Mode, while in Rx condition the chip exhibits a noise figure lower than 2.5 dB with an associated gain over 30dB.
The relevant performance of the chip itself, together with the in-Jig ones will be presented and commented, together with the status of the Leonardo 0.25um GaN/Si technology for Space applications.
|ESA Technical Officer||Mr Iain Davies|