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May 31, 2022 to June 3, 2022
Círculo de Bellas Artes of Madrid
Europe/Madrid timezone

GaN half-bridge integrated circuits for power converters

Jun 1, 2022, 1:00 PM
25m
Círculo de Bellas Artes of Madrid

Círculo de Bellas Artes of Madrid

42, Alcala Street 28014 Madrid
Custom cell-, circuit- and system- design of ICs for space applications Custom cell-, circuit-, and system design of ICs for space applications

Speaker

Marc Fossion (Thales Alenia Space Belgium)

Description

First GaN Half-bridges were developed and tested in the frame of SloGaN VLAIO project. The aim was to achieve integration of high voltage & high current transistors with low voltage control & gate drive devices.

Second step is a full feature 3..8A 200V integrated GaN IC Half-bridge been developed under an ESA GSTP program. Figure 1 shows the run1 (=prototype) of IC.

As a step forward, we are looking forward to develop under the European Comission ELEGANT space project, a high current low voltage point of load converter based on GaN integrated half-bridges and new magnetic components. This PoL converter aims at delivering 75 Amp. current at low voltage output (down to 0.7V) in order to supply high complexity integrated circuits like FPGA or processors.

Primary authors

Marc Fossion (Thales Alenia Space Belgium) Paul MAYNADIER Mr Deniz Aygün (MinDCet) Stefaan Decoutere (imec.IC-link) Mrs Valérie Schillemans (MinDCet)

Co-authors

Christophe DELEPAUT (ESA-ESTEC) Dr Mike Wens (MinDCet) Dr Jef Thone (MinDCet) Mr Martin Haug (Wurth Electronics) Mr Andrew Barnes (ESA) Mr Fabio Vitobello (European Commission)

Presentation materials