Speaker
Mr
Maurizio Cirillo
(IHP GmbH)
Description
IHP has been actively involved since many years in developing and providing un-restricted access to Process Design Kits (PDKs) for their high-performance 0.25µm and 0.13µm SiGe BiCMOS Technologies and professional services like Multi-Project-Wafer (MPW) and Low Volume (LV) manufacturing. In response to the strategic European Non-Dependence process for Critical Space Technologies for Electrical, Electronic and Electromechanical (EEE) components, aiming to ensuring European free, un-restricted access to any required space technology supply chain, IHP has been involved in the development of RadHard SiGe Process Design Kits (PDKs). For the 250nm node, a RadHard PDK SGB25RH has been developed and evaluated in accordance to the ESCC-2269010 Basic Specification “Evaluation Test Programme for MMICs” and will be requesting EPPL Listing in 2016 while for the 130nm Technology node, PDK SG13RH is under development and sensitivity to radiation (TID, DD, SEEs) is being evaluated before going through the full ESCC-2269010 Evaluation Test Programme (2017-2019) and requesting EPPL for SG13RH within 2020.
The integration of Silicon-Germanium (SiGe) onto BiCMOS technology platforms have been proven an economically viable and valuable technology for the design and implementation of low power highly integrated microwave monolithic integrated circuits (MMICs) operating at very high frequencies (up to THz) together with complex CMOS functions unavailable in other technologies. SiGe HBTs exhibit intrinsic advantages – such as a very high tolerance to Total Ionizing Dose (TID) greater than Mrad(Si) and improved performances down to cryogenic temperatures – which make them excellent candidates for use in harsh environments like for space-based applications which any independent fabless Design House can use to develop electronic components like Application Specific Integrate Circuits (ASICs) or Monolithic Microwave Integrate Circuits (MMICs) for the space market ranging.
TID and ELDRS Pre- and post-irradiation forward Gummel plots for an HBT arrays in SGB25RH and in SG13RH together with their Forward current gain versus total ionizing dose will be presented. It will be shown that there is some dependancy of the Base-current and Forward Beta with respect to TID up to 500krad(Si)for SGB25RH while for SG13RH there is substantially no variation.
Transfer characteristics of the Standard and Enclosed Layout NMOS Transistor devices in saturation before and after TID irradiation available in SB25RH and SG13RH PDKs will be presented exhibiting very stable characteristics over 500krad(Si).
Acheived SEU LET thresholds and Cross-Sections under Heavy-Ion (HI) on 1024-bit Shift Registers based on different Flip-Flops (TMR, DICE, etc..) and recommendations for use of the combinational logic elements will be presented.
The content of the RadHard PDKs (devices and libraries) for 250nm and 130nm IHP SiGe BiCMOS Processes, the Test Vehicles (TCV, DECs and RIC) used in the Evaluation Tests in accordance with ESCC-2269010 and the most updated results concerning radiation tests and reliability evaluations on both CMOS and SiGe HBT devices as well as focusing on the failure modes and the required derating factors of such devices necessary to achieve reliability and mission lifetimes are presented.
The presentation will conclude with a short overview of the current on-going research areas and activities and IHP’s vision to the “More-than-Moore” approach like integration of THz Devices, Embedded RF-MEMS, Heterogeneous Integration (Micro-Fluidics, Through Silicon Vias, III-V on Si BiCMOS), Resistive-RAMs and Silicon Photonics which could prove useful for future compact low weight electronic components and System-on-Chip solutions for future Space or Ground-segment applications.
Summary
In this presentation, the status of the evaluation following the ESA Basic Specification (ESCC-2269010) and roadmap of IHP’s 0.25/ 0.13µm SiGe BiCMOS technologies for Space applications will be given and the status of European Preferred Parts List (EPPL) application will be discussed. Radiation and long term reliability tests performed under ESCC evaluation will be given and the results will be elaborated. Heavy-ion (HI) and Total Ionizing Dose (TID) test results will also be detailed. Finally, the Design-Kit (DK) implementation of the radiation hardened libraries will be presented together with the realized test vehicles used in the evaluation.
Primary author
Mr
Maurizio Cirillo
(IHP GmbH)
Co-authors
Mr
Florian Teply
(IHP GmbH)
Dr
Gerhard Fischer
(IHP GmbH)
Dr
Jens Schmidt
(IHP GmbH)
Dr
Milos Krstic
(IHP GmbH)
Dr
Roland Sorge
(IHP GmbH)
Dr
Vladimir Petrovic
(IHP GmbH)
