Speaker
Mr
Klas Lilja
(Robust Chip)
Description
Abstract: The effect of a single event in today’s advanced semiconductor technology is no longer restricted to a single circuit node, and can depend strongly on layout details, on the angle of the ion, and on the response of the circuit during the charge collection. In order to catch weak spots in circuits and layouts, and to get reliable predictions for space error rates, it is important to have a possibility to model the circuit designs with a full (and correct) description of the layout, of direction of the ion, and of the time profile of the charge collection.
This talk discusses simulation techniques which makes this possible, while still being fast enough to be used to generate full cross-section maps and error rate predictions for different radiation environments. Application examples from advanced FinFET technologies (logic) and bulk technologies (including analog and oscillatory circuits) will be presented along with comparisons to measured single event data.
Primary author
Mr
Klas Lilja
(Robust Chip)
Co-authors
Mounaim Bounasser
(Robust Chip)
Thiago Rocha de Assis
(Robust Chip)
