12–16 Nov 2018
ESA/ESTEC
Europe/Amsterdam timezone

Session

Mitigation and Hardening

12 Nov 2018, 17:00
Newton 1-2 (ESA/ESTEC)

Newton 1-2

ESA/ESTEC

Keplerlaan 1, 2200 AG Noordwijk The Netherlands

Presentation materials

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  1. Mr Kenneth LaBel (NASA-GSFC)
    12/11/2018, 17:00
    Mitigation and hardening

    As the space business rapidly evolves to accommodate a lower cost model of development and operation via concepts such as commercial space and small spacecraft (aka, CubeSats and swarms), traditional EEE parts screening and qualification methods are being scrutinized under a risk reward trade space. In this presentation, two basic concepts will be discussed: The movement from complete risk...

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  2. Dr Stephen Buchner (United States Naval Research Laboratory)
    13/11/2018, 09:30
    Mitigation and hardening

    The approach used to ensure that parts will meet performance requirements for a mission operating in a radiation environment will be discussed. First part
    will mostly focus on Single Event Effect Hardness Assurance. A particular mission will be used to illustrate the method. Second part will develop total ionizing dose (TID) and displacement damage (DD) hardness assurance.
    Rationale for...

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  3. Mr Michel Pignol (CNES)
    13/11/2018, 11:00
    Mitigation and hardening

    This talk describes the suitable protections at architecture and system level against the effects of radiation on electronic components and digital systems. After the description of the general architecture of a space avionics system, the potential solutions for each type of units constituting an on-board computer are presented through the example of real space applications: avionics bus,...

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  4. Mr Agustin Fernandez-Leon (ESA/ESTEC)
    14/11/2018, 09:30
    Mitigation and hardening
  5. Mrs Melanie Berg (NASA - GSFC)
    14/11/2018, 11:00
    Mitigation and hardening

    Technology is changing at a fast pace. Transistor geometries are getting smaller, voltage thresholds are getting lower, design complexity is exponentially increasing, and user options are expanding. Consequently, reliable insertion of error detection and correction (EDAC) circuitry has become relatively challenging. As a response, a variety of mitigation techniques are being implemented. They...

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  6. Joao Baptista dos Santos (Santa Maria Design House)
    14/11/2018, 12:00
    Mitigation and hardening

    The effects produced by radiation on integrated circuits can be classified into Single Event Effects (SEE) related to transient problems and Total Ionization Dose (TID) effects that arise due to the long exposure time ionizing radiation. The mitigation of these effects on integrated circuits can be done in three ways: Manufacturing Process Level, Architectural Level (redundancy) and Layout...

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  7. Sung Chung (QRT Inc.)
    15/11/2018, 11:00
    Mitigation and hardening
  8. Dr Fakhreddine Ghaffari (ENSEA)
    15/11/2018, 12:00
    Mitigation and hardening
  9. Dr José Ramón González (ESA/ESTEC), Dr Carsten Baur (ESA/ESTEC)
    15/11/2018, 14:30
    Mitigation and hardening
  10. Milan Malich
    Mitigation and hardening
    Poster

    Development of read-out interfaces dedicated for the advanced hybrid radiation pixel detector Timepix will be presented. A basic concept and importance of a read-out interface as an absolutely necessary supporting electronics for proper operation and exploitation of the radiation detector Timepix and its advanced features will be explained. Then several application specific variants of...

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  11. Mr Sedki Amor (Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Place du Levant, 3, 1348 Louvain-la-Neuve, Belgium.)
    Mitigation and hardening
    Poster

    Abstract: Silicon On Insulator (SOI) technology has already improved immunity to Single Event Effects (SEE) thanks to the presence of the Buried Oxide (BOX). However, this technology remain very sensitive to the Total Ionizing Dose (TID) [1]. In recent works, we have integrated micro-heaters in the close vicinity of Partially-Depleted (PD) Metal-Oxide-Semiconductor Field-Effect Transistors...

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