Speaker
Dr
Bram De Muer
(ICsense)
Description
Recent trends show the growing need for more analog, mixed-signal and high-voltage IP to enhance the intelligence and reduce the cost of satellites. This paper presents the set of radiation hard, mixed-signal and high-voltage IP that is part of the imec DARE solution and that is developed in UMC 0.18um, XFAB XH018 and On Semiconductor i3t80 technology. The IP is conceived to enable rad-hard SoC developments and consists of ADCs, PLLs, clocks, linear regulators, bandgap references with current reference and temperature sensors, high-voltage DCDC converters to convert the satellite main supply to analog and digital on-chip voltages and several high-power and high-voltage switches and drivers for a.o. HPC (high-power commands). The IP is versatile to be useful in a myriad of applications and is part of the DARE platform. The IP in UMC 0.18um has been successfully silicon proven and radiation tested. First-time-right radiation hardness is achieved through a proprietary under-radiation simulation approach developed by ICsense and elaborated in this paper.
Summary
This paper presents the set of radiation hard, mixed-signal and high-voltage IP that is part of the imec DARE solution and that is developed in UMC 0.18um, XFAB XH018 and On Semiconductor i3t80 technology. The IP is consists of ADCs, PLLs, clocks, linear regulators, bandgap references with current reference and temperature sensors, high-voltage DCDC converters to convert the satellite main supply to analog and digital on-chip voltages and several high-power and high-voltage switches and drivers for a.o. HPC (high-power commands). The IP is versatile to be useful in a myriad of applications and is part of the DARE platform. The IP in UMC 0.18um has been successfully silicon proven and radiation tested.
Primary author
Dr
Bram De Muer
(ICsense)
Co-authors
Mr
Geert Thys
(imec)
Mr
Steven Redant
(imec)
