SERESSA International School 12-16 Nov. 2018

Session

Radiation effects (SEE, TID, TNID)

12 Nov 2018, 11:00

Newton 1-2 (ESA/ESTEC)

7. TID and TNID

Mr Christian POIVEY (ESA)

12/11/2018, 11:00

Radiation effects

36. Single Event Effects (SEE): Mechanisms and Classifications

Dr Stephen Buchner (United States Naval Research Laboratory)

12/11/2018, 12:15

Radiation effects

The fundamental mechanisms responsible for non-destructive and destructive
Single-Event Effects in ICs will be described in detail. This will include the
interactions of ions with the constituent materials of the IC, the response of
individual transistors to the disturbance, and the effect on the operation of the
IC. The evolution of the threat with device scaling will be addressed.

8. Single Event Effects Test Methods

Dr Konstantin Tapero

12/11/2018, 14:30

Radiation effects

The lecture presents an overview of main types of single event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including requirements for the energy of ions, their...

9. SEE effects on VLSI devices (ASIC and FPGA)

Prof. Luca Sterpone (Politecnico di Torino)

12/11/2018, 16:00

Radiation effects

Radiation effects on VLSI technology are provoked when radiation particles such as neutrons, protons or heavy ions hit a sensitive region of the integrated circuits. Due to the progressive technology scaling, VLSI devices are becoming, more and more vulnerable to Single Event Effects (SEEs) and are subject to cumulative ionizing damage known as Total Ionization Dose (TID). This talk will...

42. Development of device for testing electronics in radiation harsh environment using Timepix detectors

Jan Broulim

Radiation effects

Poster

Single Event Effects (SEE), caused generally by single energetic particles, pose an important issue when implementing electronics in a harsh radiation environment. In this work, we present an electronic system for measuring SEEs timely and spatially correlated with Timepix detectors. The Timepix detector is a semiconductor pixel detector, which contains 256 x 256 pixels. It provides energy or...

41. Modeling of SET Generation in Standard CMOS Logic Gates

Mr Marko Andjelkovic (IHP)

Radiation effects

Poster

Single Event Transients (SETs), originating in combinational logic as a result of the passage of energetic particles, represent nowadays a serious reliability issue for electronics operating under radiation exposure. In that regard, analysis of the SET generation and propagation effects in combinational logic is an important step in the rad-hard design. To enable efficient SET evaluation, the...

44. Single Event Effects Induced by Heavy Ion and Single Photon Pulsed Laser Irradiation on Atom Switch based Field Programmable Gate Array

Mr Kozo Takeuchi (Japan Aerospace Exploration Agency)

Radiation effects

Poster

Single event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal oxide semiconductor (CMOS) were investigated with both heavy ion and pulsed laser irradiation. In the evaluation of atom switch-based field programmable Gate Array (AS-FPGA), ASs showed immunity against the irradiation and there was no change of the state of ASs both in a cross-bar switch and memory in...